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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
BYG85B Fast soft-recovery rectifier
Product specification 1998 Nov 25
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape.
handbook, 4 columns
BYG85B
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
cathode band k a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current average forward current Ttp = 100 C; averaged over any 20 ms period; see Figs 2 and 7 Tamb = 60 C; AL2O3 PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Tamb = 60 C; epoxy PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Ttp = 100 C; see Fig.3 Tamb = 60 C; AL2O3 PCB mounting; see Fig.5 Tamb = 60 C; epoxy PCB mounting; see Fig.6 CONDITIONS MIN. - - - - MAX. 100 100 2.5 1.3 V V A A UNIT
IF(AV)
average forward current
-
0.98
A
IFRM IFRM IFRM IFSM Tstg Tj
repetitive peak forward current repetitive peak forward current repetitive peak forward current
- - - - -65 -65
23 12 8.5 35 +175 +175
A A A A C C
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax storage temperature junction temperature
1998 Nov 25
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 2 A; Tj = Tj max; see Fig.8 IF = 2 A; see Fig.8 IR = 0.1 mA VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.13 f = 1 MHz; VR = 0; see Fig.10 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.12 MIN. - - 120 - - - TYP. - - - - - -
BYG85B
MAX. 0.78 0.98 - 5 150 12.5 V V V
UNIT
A A ns
Cd dI R -------dt
diode capacitance maximum slope of reverse recovery current
- -
110 -
- 2
pF A/s
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig.11. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.11. For more information please refer to the `General Part of associated Handbook'. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W
1998 Nov 25
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
GRAPHICAL DATA
MBK210
BYG85B
handbook, halfpage
5
IF(AV) (A)
handbook, halfpage
2.0
MBK211
IF(AV)
4
(A) 1.6
3
1.2
2
0.8
(1)
(2)
1
0.4
0 0 40 80 120 160 200 Ttp (C)
0 0 40 80 120 160 200 Tamb (C)
a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
a = 1.42; VR = VRRMmax; = 0.5; Switched mode application; Device mounted as shown in Fig.11. 1: epoxy PCB 2: Al2O3 PCB.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
handbook, full pagewidth
30
MBK212
IFRM (A)
= 0.05
20
0.1
10
0.2
0.5 1.0
0 10-2
10-1
1
10
102
103
tp (ms)
104
Ttp = 100 C; Rth j-tp = 25 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V.
Fig.4
Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
handbook, full pagewidth
20
MBK213
IFRM (A) 16
= 0.05 12
8
0.1
0.2 4 0.5 1.0 0 10-2 10-1 1 10 102 103 tp (ms) 104
Tamb = 60 C; Rth j-a = 100 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
MBK214
IFRM (A) 8
= 0.05
6
0.1
4 0.2 0.5 1.0
2
0 10-2
10-1
1
10
102
103
tp (ms)
104
Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
5
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
handbook, halfpage
4
MBK215
handbook, halfpage I
6
MBK209
P (W) 3
a = 3 2.5 2
1.57 1.42
F (A) 5
4
2
3
2 1 1
0 0 1 2 IF(AV) (A) 3
0 0 0.4 0.8 1.2 1.6 VF (V) 2.0
a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.7
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.8
Forward current as a function of forward voltage; maximum values.
103 handbook, halfpage IR (A) 102
MGC550
102 handbook, halfpage Cd (pF)
MBK225
10
1 0 100 Tj (C) 200
10
1
10
VR (V)
102
VR = VRMMmax.
f = 1 MHz; Tj = 25 C.
Fig.9
Reverse current as a function of junction temperature; maximum values.
Fig.10 Diode capacitance as a function of reverse voltage; typical values.
1998 Nov 25
6
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
50
IF handbook, halfpage dI F dt t rr 10% t 50 2.5 IR dI R dt 100%
MGC499
4.5
1.25
MSB213
Dimensions in mm.
Fig.11 Printed-circuit board for surface mounting.
Fig.12 Reverse recovery definitions.
handbook, full pagewidth
DUT
IF (A) 0.5 t rr
0.5 A
50
0 0.25
t
+ IR (A)
0.5
1.0
MAM418
Rise time oscilloscope: tr 2 ns. Turn-on time switch: t 3 ns.
Fig.13 Test circuit and reverse recovery time waveform and definition.
1998 Nov 25
7
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors
BYG85B
SOD106
H D
A A1 c Q
E
b
(1)
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09
1998 Nov 25
8
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BYG85B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Nov 25
9
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
NOTES
BYG85B
1998 Nov 25
10
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
NOTES
BYG85B
1998 Nov 25
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/01/pp12
Date of release: 1998 Nov 25
Document order number:
9397 750 04762

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